VAPOR-PHASE EPITAXY OF GAAS BY DIRECT REDUCTION OF GACL3 WITH ASH3/H2

被引：8

作者：

HASEGAWA, F

YAMAGUCHI, H

KATAYAMA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期

关键词：

D O I：

10.1143/JJAP.27.L1546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1546 / L1548

页数：3

共 8 条

[1] EFFECTS OF CARRIER GAS AND SUBSTRATE ON THE ELECTRICAL-PROPERTIES OF EPITAXIAL GAAS GROWN BY THE SINGLE FLAT TEMPERATURE ZONE CHLORIDE VPE METHOD [J].

HASEGAWA, F ;

YAMATE, T ;

YAMAMOTO, T ;

NANNICHI, Y ;

KOUKITU, A ;

SEKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08) :1036-1042

[2] VAPOR-PHASE EPITAXIAL-GROWTH OF ALAS BY CHLORIDE TRANSPORT METHOD [J].

HASEGAWA, F ;

YAMAMOTO, T ;

KATAYAMA, K ;

NANNICHI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1548-1553

[3]

HASEGAWA F, 1984, JPN J APPL PHYS, V27, pL254

[4]

KOUKITSU A, 1976, JPN J APPL PHYS, V15, P1951

[5] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS BY THE SINGLE FLAT TEMPERATURE ZONE METHOD [J].

KOUKITU, A ;

KOUNO, S ;

TAKASHIMA, K ;

SEKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (08) :951-955

[6] REACTION-MECHANISM OF GAAS VAPOR-PHASE EPITAXY [J].

NISHIZAWA, J ;

SHIMAWAKI, H ;

SAKUMA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) :2567-2575

[7] EPITAXIAL SYNTHESIS OF GAAS USING A FLOW SYSTEM [J].

RUBENSTEIN, M ;

MYERS, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (04) :365-+

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE [J].

TOKUMITSU, E ;

KUDOU, Y ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3163-3165

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