DEFECTS IN A GATE OXIDE GROWN AFTER THE LOCOS PROCESS

被引：13

作者：

NAKAJIMA, O

SHIONO, N

MURAMOTO, S

HASHIMOTO, C

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-Shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1979年 / 18卷 / 05期

关键词：

D O I：

10.1143/JJAP.18.943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：943 / 951

页数：9

共 9 条

[1]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2]

APPELS JA, 1971, PHILIPS RES REP, V26, P157

[3] TOPOLOGY OF SILICON STRUCTURES WITH RECESSED SIO2 [J].

BASSOUS, E ;

YU, HN ;

MANISCALCO, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1729-1737

[4] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[5] PROPERTIES OF ANODIC OXIDE-FILMS FORMED IN ANODIZATION OF SILICON-NITRIDE [J].

DELLOCA, CJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (09) :1225-1230

[6]

KOOI E, 1971, PHILIPS RES REP, V26, P166

[7] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].

KOOI, E ;

VANLIEROP, JG ;

APPELS, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120

[8] DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].

OSBURN, CM ;

ORMOND, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+

[9]

SCHANNON WJ, 1970, RCA REV, V31, P430

← 1 →