BISTABLE GROWTH IN LASER-CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

KARGL, PB

KULLMER, R

BAUERLE, D

机构：

[1] Angewandte Physik, Johannes-Kepler-Universität Linz, Linz

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 06期

关键词：

D O I：

10.1007/BF00331762

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This is the first report on the observation of a bistability in laser-CVD. The effect is demonstrated for silicon deposition from silane by means of Ar+-laser radiation.

引用

页码：577 / 578

页数：2

共 9 条

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[9]

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