HIGH-PERFORMANCE HGCDTE PHOTOCONDUCTIVE DEVICES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：20

作者：

SPECHT, LT

HOKE, WE

OGUZ, S

LEMONIAS, PJ

KREISMANIS, VG

KORENSTEIN, R

机构：

[1] Raytheon Co, Lexington, MA, USA, Raytheon Co, Lexington, MA, USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 06期

关键词：

INFRARED DETECTORS - Materials - METALLORGANIC POLYMERS - Chemical Vapor Deposition - PHOTODETECTORS - Manufacture - SEMICONDUCTING TELLURIUM COMPOUNDS;

D O I：

10.1063/1.96516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductive detector arrays fabricated from metalorganic chemical vapor deposited epitaxial films of Hg//0//. //8Cd//0//. //2Te on both CdTe and Al//2O//3 substrates are reported for the first time. These devices operate in the 8-12- mu m spectral region and have detectivities of 3. 6 multiplied by 10**1**0 and 2. 6 multiplied by 10**1**0 cmHz**1**/**2/W for CdTe and Al//2O//3 substrates, respectively. These results approach background limited performance, and as such establish the feasibility of metalorganic chemical vapor deposited HgCdTe for use in advanced infrared detection systems.

引用

页码：417 / 418

页数：2

共 13 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES [J].