MEASUREMENT AND MODELING OF SHORT-CHANNEL MOS-TRANSISTOR GATE CAPACITANCES

[1] COBBOLD RSC, 1970, THEORY APPLICATIONS, P285

[2] CONILOGUE RL, 1983, THESIS U CALIF LOS A

[3] A SCALEABLE TECHNIQUE FOR THE MEASUREMENT OF INTRINSIC MOS CAPACITANCE WITH ATTO-FARAD RESOLUTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 344 - 356

[4] ON-CHIP CAPACITANCE MEASUREMENT CIRCUITS IN VSLI STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1622 - 1626

[5] Ko P. K., 1981, International Electron Devices Meeting, P600

[6] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P589

[7] SMALL GEOMETRY MOS-TRANSISTOR CAPACITANCE MEASUREMENT METHOD USING SIMPLE ON-CHIP CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) : 395 - 397

[8] MEASUREMENT OF MINIMUM-GEOMETRY MOS-TRANSISTOR CAPACITANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 357 - 363

[9] PAULOS JJ, 1982, ISSCC, P238

[10] SHEU BJ, 1984, IEEE T CIRCUITS SYST, V31, P745, DOI 10.1109/TCS.1984.1085562

[1] COBBOLD RSC, 1970, THEORY APPLICATIONS, P285

[2] CONILOGUE RL, 1983, THESIS U CALIF LOS A

[3] A SCALEABLE TECHNIQUE FOR THE MEASUREMENT OF INTRINSIC MOS CAPACITANCE WITH ATTO-FARAD RESOLUTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 344 - 356

[4] ON-CHIP CAPACITANCE MEASUREMENT CIRCUITS IN VSLI STRUCTURES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1622 - 1626

[5] Ko P. K., 1981, International Electron Devices Meeting, P600

[6] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P589

[7] SMALL GEOMETRY MOS-TRANSISTOR CAPACITANCE MEASUREMENT METHOD USING SIMPLE ON-CHIP CIRCUITS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) : 395 - 397

[8] MEASUREMENT OF MINIMUM-GEOMETRY MOS-TRANSISTOR CAPACITANCES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 357 - 363

[9] PAULOS JJ, 1982, ISSCC, P238

[10] SHEU BJ, 1984, IEEE T CIRCUITS SYST, V31, P745, DOI 10.1109/TCS.1984.1085562