A NEW METHOD FOR EPITAXIAL GROWTH OF SILICON AND ITS THERMODYNAMICAL ANALYSIS

被引：8

作者：

ARIZUMI, T

NISHINAGA, T

KASUGA, M

OGAWA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 01期

关键词：

D O I：

10.1143/JJAP.8.32

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：32 / +

页数：1

共 13 条

[1]

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :460-&

[10] MULTIPLE SLICE EPITAXIAL DEPOSITION OF SILICON IN RESISTANCE HEATED FURNACE [J].

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