MULTIPLE SLICE EPITAXIAL DEPOSITION OF SILICON IN RESISTANCE HEATED FURNACE

被引：5

作者：

LOMBOS, BA

SOMOGYI, TR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 09期

关键词：

D O I：

10.1149/1.2426325

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1097 / 1099

页数：3

相关论文

共 9 条

[1] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J].

CHARIG, JM ;

JOYCE, BA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) :957-962

[2] EPITAXIAL DEPOSITION OF SILICON IN A HOT-TUBE FURNACE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (06) :514-517

[3] EPITAXIAL GROWTH OF SILICON [J].

LI, CH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) :952-957

[4] SINGLE CRYSTAL SILICON OVERGROWTHS [J].

MARK, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (09) :880-885

[5] EPITAXIAL SILICON THIN FILMS [J].

MILLER, KJ ;

MANZ, RC ;

GRIECO, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) :643-645

[6] INTERFERENCE METHOD FOR MEASURING THICKNESS OFEPITAXIALLY GROWN FILMS [J].

SPITZER, WG ;

TANENBAUM, M .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :744-&

[7] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) :649-653

[8]

THEUERER HC, 1960, P IRE, V48, P1642

[9] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J].

THOMAS, CO ;

KAHNG, D ;

MANZ, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) :1055-1061