ON DIFFUSION BY THE DISSOCIATIVE MECHANISM IN THE CASE OF A FINITE FOREIGN-ATOM SOURCE

被引:15
作者
STOLWIJK, NA
机构
[1] Institut für Metallforschung, Universität Münster
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 157卷 / 01期
关键词
D O I
10.1002/pssb.2221570109
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The dissociative mechanism describes long‐distance transport of mainly substitutionally dissolved impurities (Xs) by a small fraction of atoms in an interstitial configuration (Xi). Site interchange takes places with the aid of vacancies (V): Xi + V ⇌ Xs. Theoretical treatments of dissociative diffusion given in the literature deal with a virtually infinite foreign‐atom source producing a constant concentration at the boundary. Expressions of the dissociative diffusion coefficient and the corresponding solutions of Fick's second law are derived for finite source conditions under which all foreign atoms available get involved in the diffusion process. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:107 / 115
页数:9
相关论文
共 14 条
[1]  
Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351
[2]  
Crank J, 1979, MATH DIFFUSION, DOI [10.1021/ja01562a072, DOI 10.1021/JA01562A072]
[3]  
DAMASK AC, 1963, POINT DEFECTS METALS, P81
[4]   AN ANALYTICAL SOLUTION TO FICK EQUATIONS IN THE CASE OF THE DISSOCIATIVE DIFFUSION MECHANISM [J].
EDELIN, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (02) :699-708
[5]   MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].
FRANK, FC ;
TURNBULL, D .
PHYSICAL REVIEW, 1956, 104 (03) :617-618
[6]   SELF-INTERSTITIAL AND VACANCY CONTRIBUTIONS TO SILICON SELF-DIFFUSION DETERMINED FROM THE DIFFUSION OF GOLD IN SILICON [J].
MOREHEAD, F ;
STOLWIJK, NA ;
MEYBERG, W ;
GOSELE, U .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :690-692
[7]  
Stolwijk N. A., 1988, Diffusion and Defect Data - Solid State Data, Part A (Defect and Diffusion Forum), VA59, P79
[8]   DIFFUSION OF GOLD IN SILICON STUDIED BY MEANS OF NEUTRON-ACTIVATION ANALYSIS AND SPREADING-RESISTANCE MEASUREMENTS [J].
STOLWIJK, NA ;
SCHUSTER, B ;
HOLZL, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02) :133-140
[9]  
STOLWIJK NA, 1985, J APPL PHYS, V57, P5211, DOI 10.1063/1.335259
[10]  
STOLWIJK NA, 1989, IN PRESS INT C DIFFU