ISOTHERMAL ANNEALING OF 0.97-EV LUMINESCENCE IN ELECTRON-IRRADIATED SI

[1] BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290

[2] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[3] Recombination luminescence in irradiated silicon. Effects of thermal annealing and lithium impurity [J]. Radiation Effects, 1971, 9 (1-2): : 89 - 92

[4] Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

[5] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J]. PHYSICAL REVIEW, 1968, 173 (03): : 734 - +

[6] RECOMBINATION LUMINESCENCE IN IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1968, 175 (03): : 1010 - +

[7] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A543 - +

[8] YUKHNEVICH AV, 1967, FIZ TVERD TELA+, V8, P2571

[1] BORTNIK MV, 1967, SOV PHYS SEMICOND+, V1, P290

[2] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[3] Recombination luminescence in irradiated silicon. Effects of thermal annealing and lithium impurity [J]. Radiation Effects, 1971, 9 (1-2): : 89 - 92

[4] Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

[5] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J]. PHYSICAL REVIEW, 1968, 173 (03): : 734 - +

[6] RECOMBINATION LUMINESCENCE IN IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1968, 175 (03): : 1010 - +

[7] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE OF DIVACANCY [J]. PHYSICAL REVIEW, 1965, 138 (2A): : A543 - +

[8] YUKHNEVICH AV, 1967, FIZ TVERD TELA+, V8, P2571