NEGATIVE DIFFERENTIAL CONDUCTANCE OBSERVED IN A LATERAL DOUBLE CONSTRICTION DEVICE

被引：17

作者：

WU, JC

WYBOURNE, MN

BERVEN, C

GOODNICK, SM

SMITH, DD

机构：

[1] OREGON STATE UNIV,DEPT ELECT & COMP ENGN,CORVALLIS,OR 97331

[2] USA,ETDL,SLCET,ED,FT MONMOUTH,NJ 07703

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 20期

关键词：

D O I：

10.1063/1.108186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

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页码：2425 / 2427

页数：3

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