EFFECT OF HIGH-PRESSURE ON RADIATIVE RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON

被引：22

作者：

WEINSTEIN, BA

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.23.787

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：787 / 793

页数：7

共 44 条

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