TRANSIENT EFFECTS DURING SIMS DEPTH PROFILING WITH OXYGEN

[1] BOUDEWIJN PR, IN PRESS SIMS 6 P

[2] LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .1. PROFILE MEASUREMENTS AND CALCULATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 1 - 6

[3] Clegg J. B., 1982, Secondary Ion Mass Spectrometry. SIMS III. Proceedings of the Third International Conference, P308

[4] DELINE VR, 1986, SECONDARY ION MASS S, P299

[5] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[6] OXYGEN-INDUCED SEGREGATION EFFECTS IN SPUTTER DEPTH-PROFILING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 206 - 209

[7] HUES SM, 1986, SECONDARY ION MASS S, P303

[8] LITTLEWOOD SD, 1986, SECONDARY ION MASS S, P310

[9] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON [J]. APPLIED SURFACE SCIENCE, 1981, 7 (04) : 372 - 392

[10] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT [J]. APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242

[1] BOUDEWIJN PR, IN PRESS SIMS 6 P

[2] LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .1. PROFILE MEASUREMENTS AND CALCULATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 1 - 6

[3] Clegg J. B., 1982, Secondary Ion Mass Spectrometry. SIMS III. Proceedings of the Third International Conference, P308

[4] DELINE VR, 1986, SECONDARY ION MASS S, P299

[5] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[6] OXYGEN-INDUCED SEGREGATION EFFECTS IN SPUTTER DEPTH-PROFILING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 206 - 209

[7] HUES SM, 1986, SECONDARY ION MASS S, P303

[8] LITTLEWOOD SD, 1986, SECONDARY ION MASS S, P310

[9] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON [J]. APPLIED SURFACE SCIENCE, 1981, 7 (04) : 372 - 392

[10] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT [J]. APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242