POWER INTEGRATED-CIRCUITS - A BRIEF OVERVIEW

被引：18

作者：

BALIGA, BJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 12期

关键词：

D O I：

10.1109/T-ED.1986.22849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1936 / 1939

页数：4

共 14 条

[1]

APPELS JA, 1979, IEDM, P238

[2]

BALIGA BJ, 1979, ELECTRON LETT, V15, P645, DOI 10.1049/el:19790459

[3] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE [J].

BALIGA, BJ ;

ADLER, MS ;

LOVE, RP ;

GRAY, PV ;

ZOMMER, ND .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :821-828

[4]

BALIGA BJ, 1984, POWER TRANSISTORS DE

[5]

Becke H. W., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P724

[6]

Hartman A. R., 1981, International Electron Devices Meeting, P250

[7] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].

JAUSSAUD, C ;

STOEMENOS, J ;

MARGAIL, J ;

DUPUY, M ;

BLANCHARD, B ;

BRUEL, M .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066

[8]

LANE WA, 1979, IEDM TECH DIG, P598

[9]

MURARI B, 1978, IEEE J SOLID-ST CIRC, V13, P307, DOI 10.1109/JSSC.1978.1051046

[10] HIGH-VOLTAGE CMOS SIMOX TECHNOLOGY AND ITS APPLICATION TO A BSH-LSI [J].

NAKASHIMA, S ;

MAEDA, Y ;

AKIYA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :126-132

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