HIGH-VOLTAGE CMOS SIMOX TECHNOLOGY AND ITS APPLICATION TO A BSH-LSI

被引：10

作者：

NAKASHIMA, S

MAEDA, Y

AKIYA, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：126 / 132

页数：7

共 17 条

[1] THEORY OF FIELD EFFECT IN AMORPHOUS COVALENT SEMICONDUCTOR FILMS [J].

BARBE, DF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :102-&

[2]

BRICE DK, ION IMPLANTATION RAN, V1

[3] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[4] ELECTRONIC PROPERTIES OF SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

SOLID STATE COMMUNICATIONS, 1977, 21 (06) :591-593

[5]

HAYASHI T, 1981, I PHYS C SER, V59, P533

[6] HIGH-SPEED C-MOS IC USING BURIED SIO2 LAYERS FORMED BY ION-IMPLANTATION [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :151-154

[7] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[8]

KAJIYAMA K, COMMUNICATION

[9] SUBSCRIBER LINE INTERFACE CIRCUIT LSI FABRICATED USING HIGH-VOLTAGE CMOS SIMOX TECHNOLOGY [J].

NAKASHIMA, S ;

MAEDA, Y .

ELECTRONICS LETTERS, 1983, 19 (25-2) :1095-1097

[10] ELECTRIC-FIELD-SHIELDING LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

NAKASHIMA, S ;

AKIYA, M ;

KATO, K .

ELECTRONICS LETTERS, 1983, 19 (15) :568-570

← 1 2 →