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SUPERBETA POLYSILICON EMITTER TRANSISTORS
被引:13
作者
:
KEYES, EP
论文数:
0
引用数:
0
h-index:
0
KEYES, EP
TARR, NG
论文数:
0
引用数:
0
h-index:
0
TARR, NG
机构
:
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1987年
/ 8卷
/ 07期
关键词
:
D O I
:
10.1109/EDL.1987.26642
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:312 / 314
页数:3
相关论文
共 5 条
[1]
de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3
[2]
ION-IMPLANTED SUPER-GAIN TRANSISTORS
[J].
GEGG, WM
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
GEGG, WM
;
SALTICH, JL
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
SALTICH, JL
;
ROOP, RM
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
ROOP, RM
;
GEORGE, WL
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
GEORGE, WL
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
:485
-491
[3]
IMPROVEMENTS IN CURRENT GAIN AND BREAKDOWN VOLTAGE OF SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS
[J].
MORAVVEJFARSHI, MK
论文数:
0
引用数:
0
h-index:
0
MORAVVEJFARSHI, MK
;
GUO, WL
论文数:
0
引用数:
0
h-index:
0
GUO, WL
;
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
GREEN, MA
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(11)
:632
-634
[4]
A TRUE POLYSILICON EMITTER TRANSISTOR
[J].
ROWLANDSON, MB
论文数:
0
引用数:
0
h-index:
0
ROWLANDSON, MB
;
TARR, NG
论文数:
0
引用数:
0
h-index:
0
TARR, NG
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(06)
:288
-290
[5]
A STUDY OF N+-SIPOS-P-SI HETEROJUNCTION EMITTERS
[J].
YABLONOVITCH, E
论文数:
0
引用数:
0
h-index:
0
机构:
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
YABLONOVITCH, E
;
GMITTER, T
论文数:
0
引用数:
0
h-index:
0
机构:
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
GMITTER, T
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(11)
:597
-599
←
1
→
共 5 条
[1]
de Graaff H. C., 1977, Solid-State Electronics, V20, P515, DOI 10.1016/S0038-1101(77)81008-3
[2]
ION-IMPLANTED SUPER-GAIN TRANSISTORS
[J].
GEGG, WM
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
GEGG, WM
;
SALTICH, JL
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
SALTICH, JL
;
ROOP, RM
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
ROOP, RM
;
GEORGE, WL
论文数:
0
引用数:
0
h-index:
0
机构:
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
MOTOROLA INC,DIV INTEGRATED CIRCUIT,PHOENIX,AZ 85036
GEORGE, WL
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
:485
-491
[3]
IMPROVEMENTS IN CURRENT GAIN AND BREAKDOWN VOLTAGE OF SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS
[J].
MORAVVEJFARSHI, MK
论文数:
0
引用数:
0
h-index:
0
MORAVVEJFARSHI, MK
;
GUO, WL
论文数:
0
引用数:
0
h-index:
0
GUO, WL
;
GREEN, MA
论文数:
0
引用数:
0
h-index:
0
GREEN, MA
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(11)
:632
-634
[4]
A TRUE POLYSILICON EMITTER TRANSISTOR
[J].
ROWLANDSON, MB
论文数:
0
引用数:
0
h-index:
0
ROWLANDSON, MB
;
TARR, NG
论文数:
0
引用数:
0
h-index:
0
TARR, NG
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(06)
:288
-290
[5]
A STUDY OF N+-SIPOS-P-SI HETEROJUNCTION EMITTERS
[J].
YABLONOVITCH, E
论文数:
0
引用数:
0
h-index:
0
机构:
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
YABLONOVITCH, E
;
GMITTER, T
论文数:
0
引用数:
0
h-index:
0
机构:
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
EXXON RES & ENGN CO,ANNANDALE,NJ 08801
GMITTER, T
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(11)
:597
-599
←
1
→