IMPROVEMENTS IN CURRENT GAIN AND BREAKDOWN VOLTAGE OF SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS

被引：4

作者：

MORAVVEJFARSHI, MK

GUO, WL

GREEN, MA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：632 / 634

页数：3

共 15 条

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