FORMATION AND PROPERTIES OF THIN TUNNELABLE SIO2-FILMS USING A VAPORIZED O2 SOURCE AT LIQUID N2 TEMPERATURE

被引：15

作者：

HORIUCHI, M

KAMIGAKI, Y

HAGIWARA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 05期

关键词：

D O I：

10.1149/1.2131545

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：766 / 771

页数：6

共 21 条

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