AN ANALYTICAL MODEL OF DIFFUSION CURRENT IN INTRINSICALLY GETTERED STRUCTURES BASED ON INTENTIONAL CONTAMINATION EXPERIMENTS

被引：10

作者：

PEARCE, CW ^{[1
]}

JACCODINE, RJ ^{[1
]}

机构：

[1] LEHIGH UNIV,SOLID STATE MAT,BETHLEHEM,PA 18015

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 09期

关键词：

D O I：

10.1109/16.83743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used the results of intentional iron implants into bulk wafers with intrinsic gettering to develop an analytical model suitable for calculating the diffusion current in both bulk and epitaxial wafer structures. The model is used to compare the improvement in diffusion current an epitaxial wafer provides over a bulk wafer. For typical structures factors reductions in diffusion current of 10 to 100 x are predicted when using epitaxial wafers.

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收藏

页码：2155 / 2160

页数：6

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