HOPPING CONDUCTION NEAR THE METAL-INSULATOR-TRANSITION IN AMORPHOUS INDIUM OXIDE

被引：26

作者：

GRAHAM, MR

BELLINGHAM, JR

ADKINS, CJ

机构：

[1] Cavendish Laboratory, Cambridge, CB3 OHE, Madingley Road

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1992年 / 65卷 / 04期

关键词：

D O I：

10.1080/13642819208204901

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present conductivity data for a range of amorphous indium oxide samples and analyse the region of activated conductivity in an attempt to identify hopping processes. The results suggest that, in highly resistive samples, conduction is by variable-range hopping in a Coulomb gap, the localized states being deep in the gap and related to the disorder. In more conductive material, there appears to be a trend towards Mott hopping as the Fermi level rises towards the conduction band.

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页码：669 / 673

页数：5

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