NEAR-BAND-EDGE ABSORPTION AND POSITRON TRAPPING UNDER ILLUMINATION IN SEMIINSULATING GAAS - ROLE OF AS VACANCIES

被引：14

作者：

LEBERRE, C

CORBEL, C

MIH, R

BROZEL, MR

TUZEMEN, S

KUISMA, S

SAARINEN, K

HAUTOJARVI, P

FORNARI, R

机构：

[1] UMIST, DEPT ELECT ENGN & ELECTR, MANCHESTER M60 1QL, LANCS, ENGLAND

[2] HELSINKI UNIV TECHNOL, PHYS LAB, SF-02150 ESPOO, FINLAND

[3] CNR, INST MASPEC, I-43100 PARMA, ITALY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期

关键词：

D O I：

10.1063/1.113158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption.© 1995 American Institute of Physics.

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页码：2534 / 2536

页数：3

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