OBSERVATION OF A MONOVACANCY IN THE METASTABLE STATE OF THE EL2 DEFECT IN GAAS BY POSITRON-ANNIHILATION

被引:71
作者
KRAUSE, R
SAARINEN, K
HAUTOJARVI, P
POLITY, A
GARTNER, G
CORBEL, C
机构
[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO,FINLAND
[2] BERGAKAD FREIBERG,SEKT PHYS,O-9200 FREIBERG,GERMANY
[3] CENS,INST NATL SCI & TECH NUCL,F-91191 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1103/PhysRevLett.65.3329
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A monovacancy defect is observed by positron-lifetime and Doppler-broadening experiments in semi-insulating GaAs after photoquenching the EL2 defects. The monovacancy exhibits the same thermal and optical recoveries as the metastable state of EL2 and its concentration is proportional to that of the EL2 defect. It is concluded that the metastable state of the EL2 defect involves the monovacancy. The results indicate that the monovacancy or its immediate surroundings is negatively charged.
引用
收藏
页码:3329 / 3332
页数:4
相关论文
共 19 条