GAAS, ALGAAS, AND INGAAS EPILAYERS CONTAINING AS CLUSTERS - SEMIMETAL/SEMICONDUCTOR COMPOSITES

被引：32

作者：

MELLOCH, MR ^{[1
]}

WOODALL, JM ^{[1
]}

OTSUKA, N ^{[1
]}

MAHALINGAM, K ^{[1
]}

CHANG, CL ^{[1
]}

NOLTE, DD ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 22卷 / 01期

关键词：

D O I：

10.1016/0921-5107(93)90219-D

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new kind of semiconductor composite material is demonstrated with a dispersion of semimetallic particles with properties common to high-quality single crystals. These materials are arsenides such as GaAs, AlGaAs, and InGaAs containing arsenic clusters. These composites are formed by incorporating excess As in the semiconductor, which precipitate with anneal. The incorporation of the excess As is accomplished by molecular beam epitaxy al low substrate temperatures. We demonstrate that the cluster densities can be controlled with the coarsening anneal. Furthermore, we demonstrate that heterojunctions and doping can be used to control the positioning of the As clusters.

引用

页码：31 / 36

页数：6

共 36 条

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