CHARACTERIZATION OF RESIDUAL CARBON IN SEMI-INSULATING GAAS

被引：12

作者：

BONCEK, RK

RODE, DL

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6315 / 6321

页数：7

共 36 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[3] MIDINFRARED DISPERSION OF THE REFRACTIVE-INDEX AND REFLECTIVITY FOR GAAS [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4528-4532

[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[5] CALIBRATION OF THE CARBON LOCALIZED VIBRATIONAL-MODE ABSORPTION-LINE IN GAAS [J].

BROZEL, MR ;

FOULKES, EJ ;

SERIES, RW ;

HURLE, DTJ .

APPLIED PHYSICS LETTERS, 1986, 49 (06) :337-339

[6] CORRELATION OF THRESHOLD VOLTAGE OF IMPLANTED FIELD-EFFECT TRANSISTORS AND CARBON IN GAAS SUBSTRATES [J].

CHEN, RT ;

HOLMES, DE ;

ASBECK, PM .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :459-461

[7] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[8] DISTRIBUTION COEFFICIENT OF CARBON IN MELT-GROWN GAAS [J].

DESNICA, UV ;

CRETELLA, MC ;

PAWLOWICZ, LM ;

LAGOWSKI, J .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3639-3642

[9] HEAT TREATMENT OF GALLIUM ARSENIDE [J].

EDMOND, JT .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1428-1430

[10] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J].

EPLER, JE ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL ;

BASHAW, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1447-1449

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