THE EFFECT OF METAL MASKS ON THE PLASMA ETCH RATE OF SILICON

被引：25

作者：

FEDYNYSHYN, TH

GRYNKEWICH, GW

CHEN, BA

MA, TP

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

[3] OLIN RES CTR,CHESHIRE,CT 06410

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 06期

关键词：

D O I：

10.1149/1.2097015

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1799 / 1804

页数：6

共 14 条

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[2] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].

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[3]

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[4] MASK DEPENDENT ETCH RATES .3. THE EFFECT OF A SILVER ETCH MASK ON THE PLASMA ETCH RATE OF SILICON [J].

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GRYNKEWICH, GW ;

DUMAS, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) :268-269

[5] THE EFFECT OF ALUMINUM VS PHOTORESIST MASKING ON THE ETCHING RATES OF SILICON AND SILICON DIOXIDE IN CF4/O2 PLASMAS [J].

FEDYNYSHYN, TH ;

GRYNKEWICH, GW ;

HOOK, TB ;

LIU, MD ;

MA, TP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) :206-209

[6] MASK DEPENDENT ETCH RATES .2. THE EFFECT OF ALUMINUM VS PHOTORESIST MASKING ON THE ETCH RATES OF SILICON AND SILICON DIOXIDE IN FLUORINE CONTAINING PLASMAS [J].

FEDYNYSHYN, TH ;

GRYNKEWICH, GW ;

MA, TP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) :2580-2585

[7]

FLAMM DL, 1987, ISPC 8 TOKYO, P992

[8]

FLAMM DL, 1984, VLSI ELECT MICROSTRU, V8, pCH8

[9]

GRYNKEWICH GW, UNPUB

[10]

HUDLICKY M, 1962, CHEM ORGANIC FLUORIN, P263

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