SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS

[1] ARCHER RJ, 1972, J ELECTRON MATER, V1, P128

[2] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[3] COMPOSITION DEPENDENCE OF ENERGY-GAP IN GALNAS ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4608 - 4608

[4] BALIGA BJ, 1981, APPLIED SOLID ST B S, V2, P110

[5] BALIGA BJ, 1978, IEEE IEDM TECH DIG, P661

[6] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J]. ELECTRONICS LETTERS, 1969, 5 (14) : 313 - &

[7] AVALANCHE BREAKDOWN VOLTAGES FOR III-V SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 351 - 353

[8] HU C, 1979, IEEE T ELECTRON DEV, V26, P243

[9] THIN-FILM EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1503 - 1508

[10] VELOCITY SATURATION IN N-TYPE ALX GA1-XAS SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (10) : 570 - 572

[1] ARCHER RJ, 1972, J ELECTRON MATER, V1, P128

[2] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[3] COMPOSITION DEPENDENCE OF ENERGY-GAP IN GALNAS ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4608 - 4608

[4] BALIGA BJ, 1981, APPLIED SOLID ST B S, V2, P110

[5] BALIGA BJ, 1978, IEEE IEDM TECH DIG, P661

[6] OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES [J]. ELECTRONICS LETTERS, 1969, 5 (14) : 313 - &

[7] AVALANCHE BREAKDOWN VOLTAGES FOR III-V SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 351 - 353

[8] HU C, 1979, IEEE T ELECTRON DEV, V26, P243

[9] THIN-FILM EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) : 1503 - 1508

[10] VELOCITY SATURATION IN N-TYPE ALX GA1-XAS SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (10) : 570 - 572