LPE GAAS/(GA,AL)AS/GAAS TRANSMISSION PHOTOCATHODES AND A SIMPLIFIED FORMULA FOR TRANSMISSION QUANTUM YIELD

被引：27

作者：

LIU, YZ

HOLLISH, CD

STEIN, WW

BOLGER, DE

GREENE, PD

机构：

[1] INT TEL & TELEG,OPTICAL PROD DIV,FT WAYNE,IN 46803

[2] STANDARD TELECOMM LABS LTD,HARLOW,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 12期

关键词：

D O I：

10.1063/1.1662208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5619 / 5621

页数：3

共 8 条

[1] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J].

ALLENSON, MB ;

ROWLAND, MC ;

STEWARD, GJ ;

SYMS, CHA ;

KING, PGR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) :L89-&

[2]

ASHLEY KL, 1970, APPL PHYS LETT, V22, P23

[3] HIGH-SENSITIVITY TRANSMISSION-MODE GAAS PHOTOCATHODE [J].

GUTIERREZ, WA ;

POMMERRENIG, HD .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :292-293

[4] QUANTUM YIELD OF GAAS SEMITRANSPARENT PHOTOCATHODE [J].

LIU, YZ ;

MOLL, JL ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1970, 17 (02) :60-&

[5] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES [J].

MILLER, BI ;

CAPIK, RJ ;

HAYASHI, I ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2817-&

[6] NEW TECHNIQUE FOR TERMINATING LIQUID-PHASE EPITAXIAL-GROWTH [J].

POTEMSKI, RM ;

WOODALL, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (02) :277-&

[7] PROPERTIES OF VAPOR-DEPOSITED ALUMINUM ARSENIDE [J].

SIGAI, AG ;

ABRAHAMS, MS ;

BLANC, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :952-&

[8]

STOLLER AI, 1970, RCA REV, V31, P265

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