CHARACTERIZATION OF BURIED SILICON-NITRIDE FORMED BY NITROGEN IMPLANTATION

[1] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6169 - 6175

[2] MODEL OF TEMPERATURE-DEPENDENT DEFECT INTERACTION AND AMORPHIZATION IN CRYSTALLINE SILICON DURING ION IRRADIATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 760 - 764

[3] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 952 - 954

[4] LAM HW, 1984, MATER RES SOC S P, V23, P579

[5] FORMATION OF SILICON-ON-INSULATOR STRUCTURES BY IMPLANTED NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2713 - 2721

[6] DIFFUSION-LIMITED AGGREGATION AS A DETERMINISTIC GROWTH-PROCESS [J]. PHYSICAL REVIEW A, 1985, 32 (05): : 3160 - 3163

[7] TEKAAT EH, 1985, MATER RES SOC S P, V45, P329

[8] SYNTHESIS OF SILICON DIOXIDE BY ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 331 - 343

[9] CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1515 - 1520

[1] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6169 - 6175

[2] MODEL OF TEMPERATURE-DEPENDENT DEFECT INTERACTION AND AMORPHIZATION IN CRYSTALLINE SILICON DURING ION IRRADIATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) : 760 - 764

[3] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 952 - 954

[4] LAM HW, 1984, MATER RES SOC S P, V23, P579

[5] FORMATION OF SILICON-ON-INSULATOR STRUCTURES BY IMPLANTED NITROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2713 - 2721

[6] DIFFUSION-LIMITED AGGREGATION AS A DETERMINISTIC GROWTH-PROCESS [J]. PHYSICAL REVIEW A, 1985, 32 (05): : 3160 - 3163

[7] TEKAAT EH, 1985, MATER RES SOC S P, V45, P329

[8] SYNTHESIS OF SILICON DIOXIDE BY ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 331 - 343

[9] CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1515 - 1520