4X10(5) CM(2) V(-1) S(-1) PEAK ELECTRON MOBILITIES IN GAAS GROWN BY SOLID SOURCE MBE WITH AS2

被引：17

作者：

STANLEY, CR ^{[1
]}

HOLLAND, MC ^{[1
]}

KEAN, AH ^{[1
]}

CHAMBERLAIN, JM ^{[1
]}

GRIMES, RT ^{[1
]}

STANAWAY, MB ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90939-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A detailed study into the molecular beam epitaxy of high purity n-GaAs with arsenic dimers has been undertaken, culminating in the growth of a layer with a peak mobility of almost-equal-to 4.0 x 10(5) cm2 V-1 s-1 at 28-40 K, the highest ever recorded in bulk GaAs.

引用

收藏

页码：14 / 19

页数：6

相关论文

共 18 条

[1] THE INFLUENCE OF GROWTH-CONDITIONS ON SULFUR INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDREWS, DA ;

HECKINGBOTTOM, R ;

DAVIES, GJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4421-4425

[2] FAR-INFRARED STUDIES OF CENTRAL-CELL STRUCTURE OF SHALLOW DONORS IN GAAS AND INP [J].

ARMISTEAD, CJ ;

KNOWLES, P ;

NAJDA, SP ;

STRADLING, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6415-6434

[3] DETERMINATION OF DONOR AND ACCEPTOR IMPURITY CONCENTRATIONS IN N-INP AND N-GAAS [J].

BENZAQUEN, M ;

MAZURUK, K ;

WALSH, D ;

SPRINGTHORPE, AJ ;

MINER, C .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) :111-117

[4] EFFECT OF ARSENIC SOURCE ON THE GROWTH OF HIGH-PURITY GAAS BY MOLECULAR-BEAM EPITAXY [J].

CHAND, N ;

MILLER, RC ;

SERGENT, AM ;

SPUTZ, SK ;

LANG, DV .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1721-1723

[5] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS [J].

CHANDRA, A ;

WOOD, CEC ;

WOODARD, DW ;

EASTMAN, LF .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :645-650

[6] CHARACTERIZATION OF HIGH-PURITY GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY FROM A SOLID AS CRACKER [J].

CHOW, R ;

FERNANDEZ, R ;

ATCHLEY, D ;

CHAN, K ;

BLISS, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :163-167

[7]

CHOW R, 1987, VARIAN MBE PROCESS T

[8] SHALLOW DONORS IN VERY PURE GAAS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

CUNNINGHAM, JE ;

CHIU, TH ;

TIMP, G ;

AGYEKUM, E ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1285-1287

[9] GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2 [J].

ERICKSON, LP ;

MATTORD, TJ ;

PALMBERG, PW ;

FISCHER, R ;

MORKOC, H .

ELECTRONICS LETTERS, 1983, 19 (16) :632-633

[10] GAAS SUBSTRATE PREPARATION FOR OVAL-DEFECT ELIMINATION DURING MBE GROWTH [J].

FRONIUS, H ;

FISCHER, A ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L137-L138