CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT THE TI/INP(110) AND SN/INP(110) INTERFACES - REACTIVE VERSUS NONREACTIVE CASE

被引：11

作者：

KENDELEWICZ, T

MAHOWALD, PH

MCCANTS, CE

BARTNESS, KA

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1033 / 1038

页数：6

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[8]

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