A HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A THIN ALPHA-SI EMITTER

被引：17

作者：

LI, P

LI, YQ

SALAMA, CAT

机构：

[1] Department of Electrical and Computer Engineering, University of Toronto, Ontario, Toronto

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 06期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.293304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a modified silicon heterojunction bipolar transistor is proposed and demonstrated. The structure uses a very thin n+ amorphous silicon layer as the emitter to enhance the emitter injection efficiency and reduce the emitter resistance as well as improve the frequency response of the device.

引用

页码：932 / 935

页数：4

共 11 条

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