THE EMITTER BASE INTERFACE CURRENT IN SILICON BIPOLAR-TRANSISTORS WITH EMITTERS DEPOSITED BY PLASMA-ENHANCED CVD

被引：19

作者：

SYMONS, J ^{[1
]}

NIJS, J ^{[1
]}

MERTENS, RP ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,B-3000 LOUVAIN,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2889 / 2894

页数：6

共 12 条

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