SI SURFACE CLEANING BY SI2H6-H2 GAS ETCHING AND ITS EFFECTS ON SOLID-PHASE EPITAXY

被引：28

作者：

KUNII, Y

SAKAKIBARA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 11期

关键词：

D O I：

10.1143/JJAP.26.1816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1816 / 1822

页数：7

共 18 条

[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
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[2] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .1. THE SIH4-HCL-H2 SYSTEM
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CLAASSEN, WAP
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (03) : 435 - 444
[3] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES
CLAASSEN, WAP
BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202
[4] THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .3. THE SIH4-HCL-H2 SYSTEM AT LOW-TEMPERATURES
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BLOEM, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1353 - 1359
[5] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .3. THE SIH4-H2-N2 SYSTEM
CLAASSEN, WAP
BLOEM, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 443 - 452
[6] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT
DONAHUE, TJ
REIF, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765
[7] FURUKAWA S, 1985, SILICON INSULATOR IT
[8] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI
HUNG, LS
LAU, SS
VONALLMEN, M
MAYER, JW
ULLRICH, BM
BAKER, JE
WILLIAMS, P
TSENG, WF
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 909 - 911
[9] SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW
JASTRZEBSKI, L
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 253 - 270
[10] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

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