HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF 1.5-NM ULTRATHIN TUNNEL OXIDES OF METAL-NITRIDE-OXIDE-SILICON NONVOLATILE MEMORY DEVICES

被引：3

作者：

KAMIGAKI, Y

MINAMI, S

SHIMOTSU, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 26期

关键词：

D O I：

10.1063/1.100539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2629 / 2631

页数：3

共 10 条

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[10] SCALING DOWN MNOS NON-VOLATILE MEMORY DEVICES [J].

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