SI-SIO2 INTERFACE CHARACTERIZATION FROM ANGULAR-DEPENDENCE OF X-RAY PHOTOELECTRON-SPECTRA

被引：39

作者：

ISHIZAKA, A

IWATA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 01期

关键词：

D O I：

10.1063/1.91278

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：71 / 73

页数：3

共 17 条

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[9] ELECTRIC CHARGING OF THIN INSULATING FILM BY X-RADIATION [J].

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