MAXIMUM LENGTH OF LARGE DIAMETER CZOCHRALSKI SILICON SINGLE-CRYSTALS AT FRACTURE-STRESS LIMIT OF SEED

被引:14
作者
KIM, KM
SMETANA, P
机构
[1] IBM Technology Division, East Fishkill Laboratories, Hopewell Junction
关键词
D O I
10.1016/0022-0248(90)90253-H
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Growth of large diameter Czochralski (CZ) silicon crystals require complete elimination of dislocations by means of Dash technique, where the seed diameter is reduced to a small size typically 3 mm in conjunction with increase in the pull rate. The maximum length of the large CZ silicon is estimated at the fracture stress limit of the seed neck diameter (d). The maximum lengths for 200 and 300 mm CZ crystals amount to 197 and 87 cm, respectively, with d = 0.3 cm; the estimated maximum weight is 144 kg. © 1990.
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页码:527 / 528
页数:2
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