TRANSCONDUCTANCE DEPENDENCE ON GATE LENGTH FOR GAAS GATE PSEUDOMORPHIC AND CONVENTIONAL SISFETS AT 300-K AND 77-K

被引：3

作者：

SCHMIDT, PE

BARBIER, E

COLLOT, P

GAONACH, C

CHAMPAGNE, M

PONS, D

机构：

[1] Thomson-CSF Central Research Laboratory, Cedex, 91404, Orsay

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Gallium arsenide; Indium compounds; Semiconductor devices and materials;

D O I：

10.1049/el:19900141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the transconductance dependence on gate length for pseudomorphic (PM-) and conventional GaAs gate SISFETs. With an identical material structure, except for the GaInAs channel, PM-SISFETs have higher transconductances at room temperature, for gate lengths between 1μm and 19μm. At. 77 K, however we show that higher transconductances are obtained with conventional SISFETs having gate lengths larger than 2 μm. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：210 / 211

页数：2

共 5 条

[1] TRANSCONDUCTANCE DEPENDENCE ON GATE LENGTH FOR GAAS GATE SISFETS [J].