STRESS DISTRIBUTIONS IN SILICON CRYSTAL SUBSTRATES WITH THIN-FILMS

[1] STRESSES IN SIO2 FILMS OBTAINED FROM THERMAL DECOMPOSITION OF TETRAETHYLORTHOSILICATE - EFFECT OF HEAT TREATMENT AND HUMIDITY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1732 - &

[2] X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .3. INTENSITY DISTRIBUTION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4405 - 4412

[3] [Anonymous], 1970, THEORY ELASTICITY

[4] ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2913 - &

[5] STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 415 - +

[6] HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575

[7] FILM-EDGE-INDUCED STRESS IN SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 5 - 7

[8] DISLOCATION PROPAGATION AND EMITTER EDGE DEFECTS IN SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4098 - 4106

[9] DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1014 - 1019

[10] CREEP CURVE OF SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 564 - 566

[1] STRESSES IN SIO2 FILMS OBTAINED FROM THERMAL DECOMPOSITION OF TETRAETHYLORTHOSILICATE - EFFECT OF HEAT TREATMENT AND HUMIDITY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1732 - &

[2] X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .3. INTENSITY DISTRIBUTION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4405 - 4412

[3] [Anonymous], 1970, THEORY ELASTICITY

[4] ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2913 - &

[5] STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 415 - +

[6] HU SM, 1979, J APPL PHYS, V50, P4661, DOI 10.1063/1.326575

[7] FILM-EDGE-INDUCED STRESS IN SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 5 - 7

[8] DISLOCATION PROPAGATION AND EMITTER EDGE DEFECTS IN SILICON WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4098 - 4106

[9] DISLOCATION GENERATION AT SI3N4 FILM EDGES ON SILICON SUBSTRATES AND VISCOELASTIC BEHAVIOR OF SIO2-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1014 - 1019

[10] CREEP CURVE OF SILICON WAFERS [J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 564 - 566