CREEP CURVE OF SILICON WAFERS

被引：27

作者：

ISOMAE, S ^{[1
]}

NANBA, M ^{[1
]}

TAMAKI, Y ^{[1
]}

MAKI, M ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.89261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：564 / 566

页数：3

共 9 条

[1] DISLOCATION DENSITY AND LOCAL SLIP IN GERMANIUM SINGLE CRYSTALS [J].

BERNER, K ;

ALEXANDER, H .

ACTA METALLURGICA, 1967, 15 (05) :933-+

[2] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J].

CHAUDHURI, AR ;

PATEL, JR ;

RUBIN, LG .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2736-&

[3]

Gregor L. V., 1969, Thin film dielectrics, P447

[4] RESIDUAL-STRESS IN SILICON-NITRIDE FILMS [J].

IRENE, EA .

JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :287-298

[5] MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE [J].

JACCODINE, RJ ;

SCHLEGEL, WA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2429-+

[6] KRIECHEN VON SILIZIUM-EINKRISTALLEN [J].

REPPICH, B ;

HAASEN, P ;

ILSCHNER, B .

ACTA METALLURGICA, 1964, 12 (11) :1283-&

[7] GENERATION OF DISLOCATIONS INDUCED BY CHEMICAL VAPOR-DEPOSITED SI3N4 FILMS ON SILICON [J].

TAMURA, M ;

SUNAMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) :1097-&

[8] THERMAL EXPANSION COEFFICIENT OF A PYROLITICALLY DEPOSITED SILICON NITRIDE FILM [J].

TOKUYAMA, T ;

FUJII, Y ;

SUGITA, Y ;

KISHINO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) :1252-&

[9]

Westdorp W. A., 1969, Thin film dielectrics, P546

← 1 →