IN-SITU TECHNIQUE FOR MEASURING GA SEGREGATION AND INTERFACE ROUGHNESS AT GAAS/ALGAAS INTERFACES

被引：31

作者：

BRAUN, W ^{[1
]}

PLOOG, KH ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTRON,D-10117 BERLIN,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.356324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a method, based on electron diffraction, for measuring the Ga segregation and roughness at GaAs/AlGaAs interfaces. By monitoring the phase of reflection high energy electron diffraction intensity oscillations, we can deduce changes of alloy composition in real time. In particular, we can relate the phase to the extent of As coverage and thereby explain the ''forbidden range'' for growth of GaAlAs. We have determined that segregation only occurs at the normal (AlAs on GaAs) interface and have detected Ga persisting on a nominal AlAs surface even after 20 monolayers.

引用

页码：1993 / 2001

页数：9

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