HALL-MOBILITY OF LOW-TEMPERATURE-DEPOSITED POLYSILICON FILMS BY CATALYTIC CHEMICAL-VAPOR-DEPOSITION METHOD

被引：17

作者：

MATSUMURA, H

TASHIRO, Y

SASAKI, K

FURUKAWA, S

机构：

[1] TOKYO INST TECHNOL, DEPT APPL ELECTR, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN

[2] KANAZAWA UNIV, DEPT ELECT & COMP ENGN, KANAZAWA, ISHIKAWA 920, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 9A期

关键词：

CAT-CVD; POLYSILICON; TFT; LCD; MOBILITY; CARRIER TRANSPORT;

D O I：

10.1143/JJAP.33.L1209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nondoped polysilicon films are deposited at temperatures as low as 260 degrees C by the catalytic chemical vapor deposition (cat-CVD) method using a silane and hydrogen gas mixture. Electrical properties such as the Hall mobility are investigated for various measuring temperatures. It is found that the Hall mobility depends on the hydrogen how rates during deposition and is larger than 20 cm(2)/V.s, and that the barrier height at the grain boundary appears to be lower than the thermal activation energy at room temperature.

引用

页码：L1209 / L1211

页数：3

共 8 条

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