CARRIER SCREENING OF ELECTRIC-FIELD AND ELECTROABSORPTION SATURATION IN INGAAS-GAAS QUANTUM-WELL STRUCTURE

被引:7
作者
CHIN, MK
NIKI, S
WIEDER, HH
CHANG, WSC
机构
[1] Electrical and Computer Engineering Department, 0407, University of California, San Diego, La Jolla
关键词
SEMICONDUCTOR DEVICES AND MATERIALS; ELECTROABSORPTION;
D O I
10.1049/el:19911431
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Saturation of the electroabsorption is obtained in the quantum confined Stark effect (QCSE) at low optical intensities and low electric fields, in a strained InGaAs-GaAs quantum well modulator structure operating at the exciton energy. This effect is attributed to carrier-induced screening of the internal electric field, and its implications for devices using the QCSE are discussed.
引用
收藏
页码:2310 / 2311
页数:2
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