ENHANCED SPECTRAL POWER-DENSITY AND REDUCED LINEWIDTH AT 1.3-MU-M IN AN INGAASP QUANTUM-WELL RESONANT-CAVITY LIGHT-EMITTING DIODE

The active region of an InGaAsP single-quantum well light-emitting diode (LED) emitting at 1.3 mum has been placed in the antinode of a resonant cavity consisting of a 32-period distributed Bragg reflector (DBR) and a top silver mirror, with reflectivities of 92% and 95%, respectively. The dominant feature of the 300 K electroluminescence emission at all current levels is a 3 nm (2.8 meV) wide spontaneous emission peak centered on the cavity resonance wavelength. The spectral power density of the structure is more than one order of magnitude higher as compared to a structure without cavity. The resonant-cavity LED operates without gain yet the extremely narrow spectrum indicates that the structure is suitable for wavelength division multiplexing applications.