A LATERAL SILICON-ON-INSULATOR BIPOLAR-TRANSISTOR WITH A SELF-ALIGNED BASE CONTACT

被引：26

作者：

STURM, JC

MCVITTIE, JP

GIBBONS, JF

PFEIFFER, L

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] STANFORD UNIV,STANFORD LINEAR ACCELERATOR CTR,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 03期

关键词：

D O I：

10.1109/EDL.1987.26567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：104 / 106

页数：3

共 12 条

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GREENEICH, EW ;

REUSS, RH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :91-93

[2]

HUDSON EL, 1982, ISSCC, P248

[3]

MINATO O, 1982, ISSCC, P256

[4]

Miyamoto J., 1983, International Electron Devices Meeting 1983. Technical Digest, P63

[5] VERTICAL BIPOLAR-TRANSISTORS ON BURIED SILICON-NITRIDE LAYERS [J].

MUNZEL, H ;

ALBERT, G ;

STRACK, H .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :283-285

[6]

NAKANO M, 1984, 0137992 PUBL

[7]

NAKANO M, Patent No. 841102114

[8]

Ning T. H., 1984, IBM Technical Disclosure Bulletin, V26, P5858

[9]

PFEIFFER L, 1986, MATER RES SOC S P, V53, P29

[10] SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS [J].

RODDER, M ;

ANTONIADIS, DA .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :193-195

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