VERTICAL BIPOLAR-TRANSISTORS ON BURIED SILICON-NITRIDE LAYERS

被引：10

作者：

MUNZEL, H

ALBERT, G

STRACK, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期

关键词：

D O I：

10.1109/EDL.1984.25918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：283 / 285

页数：3

共 10 条

[1] STUDY OF BURIED SILICON-NITRIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION [J].

BOURGUET, P ;

DUPART, JM ;

LETIRAN, E ;

AUVRAY, P ;

GUIVARCH, A ;

SALVI, M ;

PELOUS, G ;

HENOC, P .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6169-6175

[2] TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

BENSAHEL, D ;

AUVERT, G ;

MOREL, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :75-77

[3] VERTICAL N-P-N BIPOLAR-TRANSISTORS FABRICATED ON BURIED OXIDE SOI [J].

GREENEICH, EW ;

REUSS, RH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :91-93

[4]

GUPTA A, 1983, SOLID STATE TECH JUN, P129

[5]

GUPTA A, 1983, SOLID STATE TECH FEB, P104

[6] HIGH-SPEED C-MOS IC USING BURIED SIO2 LAYERS FORMED BY ION-IMPLANTATION [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :151-154

[7]

MUNZEL H, M MICOELECTRONIC 83

[8] SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS [J].

RODDER, M ;

ANTONIADIS, DA .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :193-195

[9] FULLY ISOLATED LATERAL BIPOLAR-MOS TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED SI FILMS ON SIO2 [J].

TSAUR, BY ;

SILVERSMITH, DJ ;

FAN, JCC ;

MOUNTAIN, RW .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :269-271

[10] CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY [J].

ZIMMER, G ;

VOGT, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1515-1520

← 1 →