TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS

[1] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[2] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[4] ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICON [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 117 - 118

[5] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[6] 101-STAGE-2 MU-M GATE RING OSCILLATORS IN LASER-GROWN SILICON ISLANDS EMBEDDED IN SIO2 [J]. ELECTRON DEVICE LETTERS, 1982, 3 (09): : 270 - 272

[7] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 241 - 243

[8] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (12): : 316 - 318

[9] NISHIMURA T, 1982, P ISSDC TOKYO, P181

[10] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L176 - L178

[1] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[2] STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 585 - 589

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[4] ONE-GATE-WIDE CMOS INVERTER ON LASER-RECRYSTALLIZED POLYSILICON [J]. ELECTRON DEVICE LETTERS, 1980, 1 (06): : 117 - 118

[5] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[6] 101-STAGE-2 MU-M GATE RING OSCILLATORS IN LASER-GROWN SILICON ISLANDS EMBEDDED IN SIO2 [J]. ELECTRON DEVICE LETTERS, 1982, 3 (09): : 270 - 272

[7] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 241 - 243

[8] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J]. ELECTRON DEVICE LETTERS, 1981, 2 (12): : 316 - 318

[9] NISHIMURA T, 1982, P ISSDC TOKYO, P181

[10] LATERAL EPITAXIAL-GROWTH IN POLY-SI FILM OVER SIO2 FROM SINGLE-SI SEED BY SCANNING CW AR LASER ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L176 - L178