OPTICAL SWITCHING OF A NEW MIDDLE TRACE IN AN OPTICALLY CONTROLLED PARALLEL RESONANT TUNNELING DEVICE - OBSERVATION AND MODELING

被引:4
作者
KAN, SC
SANDERS, S
GRIFFEL, G
LANG, GH
WU, S
YARIV, A
机构
关键词
D O I
10.1063/1.105174
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical switching of a new middle trace observed in an optically controlled parallel resonant tunneling (OPT) device is demonstrated. A circuit model for the OPT is developed. The circuit model satisfactorily explains the existence of the middle trace and its optical switching.
引用
收藏
页码:1548 / 1550
页数:3
相关论文
共 10 条
[1]   PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].
BROEKAERT, TPE ;
LEE, W ;
FONSTAD, CG .
APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547
[2]   OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].
BROWN, ER ;
SOLLNER, TCLG ;
PARKER, CD ;
GOODHUE, WD ;
CHEN, CL .
APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779
[3]   RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].
CHANG, LL ;
ESAKI, L ;
TSU, R .
APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595
[4]   OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].
GOLDMAN, VJ ;
TSUI, DC ;
CUNNINGHAM, JE .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259
[5]  
KAN SC, IN PRESS J APPL PHYS, V69
[6]  
KINARD WB, 1990, B AM PHYS SOC, V35, P301
[7]   RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].
SOLLNER, TCLG ;
GOODHUE, WD ;
TANNENWALD, PE ;
PARKER, CD ;
PECK, DD .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590
[8]   OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT [J].
SOLLNER, TCLG .
PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1622-1622
[9]   TUNNELING IN A FINITE SUPERLATTICE [J].
TSU, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564
[10]   NEW FIELD-EFFECT RESONANT TUNNELING TRANSISTOR - OBSERVATION OF OSCILLATORY TRANSCONDUCTANCE [J].
YANG, CH ;
KAO, YC ;
SHIH, HD .
APPLIED PHYSICS LETTERS, 1989, 55 (26) :2742-2744