NEW FIELD-EFFECT RESONANT TUNNELING TRANSISTOR - OBSERVATION OF OSCILLATORY TRANSCONDUCTANCE

被引：14

作者：

YANG, CH ^{[1
]}

KAO, YC ^{[1
]}

SHIH, HD ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75243

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期

关键词：

D O I：

10.1063/1.101940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2742 / 2744

页数：3

共 13 条

[1] NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR [J].

BELTRAM, F ;

CAPASSO, F ;

LURYI, S ;

CHU, SNG ;

CHO, AY ;

SIVCO, DL .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :219-221

[2]

BELTRAM F, 1989, 15TH P INT S GAAS RE, P599

[3] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J].

BONNEFOI, AR ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :888-890

[4]

BROWN ER, 1989, B AM PHYS SOC, V34, P533

[5] COHERENT AND SEQUENTIAL TUNNELING IN SERIES BARRIERS [J].

BUTTIKER, M .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) :63-75

[6]

CAPASSO F, 1987, SEMICONDUCT SEMIMET, V24, pCH6

[7] DIRECT OBSERVATION OF BALLISTIC TRANSPORT IN GAAS [J].

HEIBLUM, M ;

NATHAN, MI ;

THOMAS, DC ;

KNOEDLER, CM .

PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2200-2203

[8]

JOHNSON M, 1987, APPL PHYS LETT, V51, P1729

[9]

LURY S, 1987, HETEROJUNCTION BAND, pCH12

[10] COHERENT VERSUS INCOHERENT RESONANT TUNNELING AND IMPLICATIONS FOR FAST DEVICES [J].

LURYI, S .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) :375-382

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