CONTACT RESISTANCE TO HIGH-MOBILITY ALGAAS/GAAS HETEROSTRUCTURES

被引：7

作者：

HAWKSWORTH, SJ

CHAMBERLAIN, JM

CHENG, TS

HENINI, M

HEATH, M

DAVIES, M

PAGE, AJ

机构：

[1] Dept. of Phys., Nottingham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 08期

关键词：

D O I：

10.1088/0268-1242/7/8/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an investigation of contact resistance to high-mobility 2DEG structures (approximately 1 x 10(6) cm2 V-1 s-1) as a function of temperature (30-300 K) and magnetic field (0-0.6 T). The transmission line model (TLM) and the two-layer TLM Of Look are used to evaluate the contact resistance. The calculated specific contact resistance shows a strong temperature dependence, with both thermionic and tunnelling behaviour. The vestiges of an interface remain below the contact region. Using the two-layer TLM analysis, the degree of parallel conduction in the samples is obtained.

引用

页码：1085 / 1090

页数：6

共 12 条

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