CHARGE COLLECTION SPECTROSCOPY

被引：16

作者：

REED, RA

MCNULTY, PJ

BEAUVAIS, WJ

ROTH, DR

机构：

[1] Department of Physics and Astronomy, Clemson University, Clemson, SC

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monitoring pulses measured between the power pins of a microelectronic device exposed to high LET ions yields important information on the SEU response of the circuit. Analysis is complicated for p-well CMOS devices by the possibility of competition between junctions, but the results suggest that charge collection measurements are still sufficient to determine SEU parameters accurately.

引用

页码：1880 / 1887

页数：8

共 8 条

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MCNULTY, PJ ;

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[3] DETERMINATION OF SEU PARAMETERS OF NMOS AND CMOS SRAMS [J].

MCNULTY, PJ ;

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[4]

MCNULTY PJ, 1991, NUCL TRACKS RAD MEAS, V19, P929

[5]

MCNULTY PJ, 1990, 1990 IEEE SHORT COUR, P3

[6] RATE PREDICTION FOR SINGLE EVENT EFFECTS - A CRITIQUE [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) :1577-1599

[7]

REED RA, 1993, THESIS CLEMSON U CLE

[8] SEU CHARACTERIZATION OF A HARDENED CMOS 64K AND 256K-SRAM [J].

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FU, JS ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2311-2317

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