POLARITY-DEPENDENT MEMORY SWITCHING IN DEVICES WITH SNSE AND SNSE2 CRYSTALS

被引：50

作者：

CHUN, D ^{[1
]}

WALSER, RM ^{[1
]}

BENE, RW ^{[1
]}

COURTNEY, TH ^{[1
]}

机构：

[1] UNIV TEXAS,ELECT RES CTR,AUSTIN,TX 78712

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：479 / 481

页数：3

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